AM82731-012 npn rf power transistor description: the AM82731-012 is a common base device designed for pulsed s- band pulse output and driver radar amplifier applications. features include: ? input/output matching ? gold metallization ? emitter ballasting maximum ratings i c 2.0 a v cc 46 v p diss 50 w @ t c 50 c t j -65 c to+250 c t stg -65 c to+200 c jc 4.0 c/w package style 400 2l flg 1 = collector 2 & 4 = base 3 = emitter characteristics t c = 25 c symbol test conditions minimum typical maximum units bv cbo i c = 7.0 ma 55 v bv cer i c = 7.0 ma r be = 10 ? 55 v bv ebo i e = 1.0 ma 3.5 v i ces v ce = 40 v 0.5 ma h fe v ce = 5 v i c = 600 ma 30 300 --- p out c p g v cc = 40 v p in = 3.0 w f = 2.7 to 3.1 ghz 12 30 6.0 w % db note: pulse width = 100 s duty cycle = 10% a d v a n c e d s e m i c o n d u c t o r, i n c. rev. 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice.
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